PMK30EP518 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PMK30EP518 NXP USA Inc.
PMK30EP518

NXP USA Inc.

P-CHANNEL POWER MOSFET

PMK30EP518 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. P-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 9,796

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2240 pF @ 25 V
FET Feature-
Power Dissipation (Max)6.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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