Name: PHU11NQ10T,127
Brand: NXP USA Inc.
SKU: PHU11NQ10T,127
Availability: InStock

REF: PHU11NQ10T,127 NXP USA Inc.

PHU11NQ10T,127

MOSFET N-CH 100V 10.9A IPAK

PHU11NQ10T,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 100V 10.9A IPAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

Datasheet Request a Quote

In Stock: 2,994

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14.7 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	57.7W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA