PHT6N06T,135 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PHT6N06T,135 NXP USA Inc.
PHT6N06T,135

NXP USA Inc.

MOSFET N-CH 55V 5.5A SOT223

PHT6N06T,135 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 55V 5.5A SOT223. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

In Stock: 14,785

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 25 V
FET Feature-
Power Dissipation (Max)8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-73
Package / CaseTO-261-4, TO-261AA

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