Name: PHM30NQ10T,518
Brand: NXP USA Inc.
SKU: PHM30NQ10T,518
Availability: InStock

REF: PHM30NQ10T,518 NXP USA Inc.

PHM30NQ10T,518

MOSFET N-CH 100V 37.6A 8HVSON

PHM30NQ10T,518 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 100V 37.6A 8HVSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-VDFN Exposed Pad.

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In Stock: 2,884

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	37.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	53.7 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HVSON (5x6)
Package / Case	8-VDFN Exposed Pad