Name: PHK4NQ20T,518
Brand: NXP USA Inc.
SKU: PHK4NQ20T,518
Availability: InStock

REF: PHK4NQ20T,518 NXP USA Inc.

PHK4NQ20T,518

MOSFET N-CH 200V 4A 8SO

PHK4NQ20T,518 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 200V 4A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

Datasheet Request a Quote

In Stock: 8,856

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	130mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)