PHB23NQ10LT,118 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PHB23NQ10LT,118 NXP USA Inc.
PHB23NQ10LT,118

NXP USA Inc.

MOSFET N-CH 100V 23A D2PAK

PHB23NQ10LT,118 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 100V 23A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 9,544

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs72mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds1704 pF @ 25 V
FET Feature-
Power Dissipation (Max)98W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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