Name: PH9030AL115
Brand: NXP USA Inc.
SKU: PH9030AL115
Availability: InStock

REF: PH9030AL115 NXP USA Inc.

PH9030AL115

POWER FIELD-EFFECT TRANSISTOR

PH9030AL115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, package / case SC-100, SOT-669.

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In Stock: 1,001

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	17.8 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1006 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669