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PH6530AL115

In Stock: 4,500
PH6530AL115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PH6530AL115 NXP USA Inc.
PH6530AL115

NXP USA Inc.

POWER FIELD-EFFECT TRANSISTOR

PH6530AL115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, package / case SC-100, SOT-669.

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In Stock: 4,500

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

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