Name: PH3120L,115-NXP
Brand: NXP USA Inc.
SKU: PH3120L,115-NXP
Availability: InStock

REF: PH3120L,115-NXP NXP USA Inc.

PH3120L,115-NXP

POWER FIELD-EFFECT TRANSISTOR, 1

PH3120L,115-NXP is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. POWER FIELD-EFFECT TRANSISTOR, 1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-100, SOT-669.

Request a Quote

In Stock: 2,445

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	48.5 nC @ 4.5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4457 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669