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NX2020P1115

In Stock: 262,000
NX2020P1115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: NX2020P1115 NXP USA Inc.
NX2020P1115

NXP USA Inc.

POWER FIELD-EFFECT TRANSISTOR

NX2020P1115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. POWER FIELD-EFFECT TRANSISTOR.

Datasheet Request a Quote

In Stock: 262,000

Specifications

17 parameters
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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