Name: IRF640,127
Brand: NXP USA Inc.
SKU: IRF640,127
Availability: InStock

REF: IRF640,127 NXP USA Inc.

IRF640,127

MOSFET N-CH 200V 16A TO220AB

IRF640,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 200V 16A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 3,252

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3