BUK9E15-60E,127 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: BUK9E15-60E,127 NXP USA Inc.
BUK9E15-60E,127

NXP USA Inc.

MOSFET N-CH 60V 54A I2PAK

BUK9E15-60E,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 60V 54A I2PAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 4,364

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2651 pF @ 25 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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