Name: BUK9C1R3-40EJ
Brand: NXP USA Inc.
SKU: BUK9C1R3-40EJ
Availability: InStock

REF: BUK9C1R3-40EJ NXP USA Inc.

BUK9C1R3-40EJ

MOSFET N-CH 40V 190A D2PAK-7

BUK9C1R3-40EJ is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 40V 190A D2PAK-7. Key specifications: mounting type Surface Mount, package / case TO-263-7, D²Pak (6 Leads + Tab).

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In Stock: 1,395

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.3mOhm @ 90A, 5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)