BUK953R5-60E,127 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: BUK953R5-60E,127 NXP USA Inc.
BUK953R5-60E,127

NXP USA Inc.

MOSFET N-CH 60V 120A TO220AB

BUK953R5-60E,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 60V 120A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 2,400

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C120A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs95 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds13490 pF @ 25 V
FET Feature-
Power Dissipation (Max)293W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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