Name: BUK663R7-75C,118
Brand: NXP USA Inc.
SKU: BUK663R7-75C,118
Price: 0.83 USD
Availability: InStock

REF: BUK663R7-75C,118 NXP USA Inc.

BUK663R7-75C,118

NXP USA Inc.

PFET, 120A I(D), 75V, 0.0058OHM,

BUK663R7-75C,118 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. PFET, 120A I(D), 75V, 0.0058OHM,. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 1,157

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	234 nC @ 10 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	15450 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	306W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB