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BLF6G22LS-180RN112

In Stock: 60
BLF6G22LS-180RN112 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF
REF: BLF6G22LS-180RN112 NXP USA Inc.
BLF6G22LS-180RN112

NXP USA Inc.

RF POWER TRANSISTORS

BLF6G22LS-180RN112 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF POWER TRANSISTORS.

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In Stock: 60

Specifications

13 parameters
Product StatusActive
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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