BFG198,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF
REF: BFG198,115 NXP USA Inc.
BFG198,115

NXP USA Inc.

RF TRANS NPN 10V 8GHZ SOT223

BFG198,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 10V 8GHZ SOT223. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-261-4, TO-261AA, current - collector (ic) (max) 100mA.

In Stock: 7,368

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSC-73

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