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BFG10W/X,115

In Stock: 8,162
BFG10W/X,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF
REF: BFG10W/X,115 NXP USA Inc.
BFG10W/X,115

NXP USA Inc.

RF TRANS NPN 10V 1.9GHZ 4SO

BFG10W/X,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 10V 1.9GHZ 4SO. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case SOT-343 Reverse Pinning, current - collector (ic) (max) 250mA.

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In Stock: 8,162

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition1.9GHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max400mW
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 50mA, 5V
Current - Collector (Ic) (Max)250mA
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343 Reverse Pinning
Supplier Device Package4-SO

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