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PSMN2R0-60ES,127

In Stock: 7,334
PSMN2R0-60ES,127 - NXP Semiconductors - Transistors - FETs, MOSFETs - Single
REF: PSMN2R0-60ES,127 NXP Semiconductors
PSMN2R0-60ES,127

NXP Semiconductors

NEXPERIA PSMN2R0-60ES - 120A, 60

PSMN2R0-60ES,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP Semiconductors. NEXPERIA PSMN2R0-60ES - 120A, 60. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 7,334

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs137 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9997 pF @ 30 V
FET Feature-
Power Dissipation (Max)338W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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