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PSMN1R1-30PL,127

In Stock: 6,020
PSMN1R1-30PL,127 - NXP Semiconductors - Transistors - FETs, MOSFETs - Single
REF: PSMN1R1-30PL,127 NXP Semiconductors
PSMN1R1-30PL,127

NXP Semiconductors

NEXPERIA PSMN1R1-30PL - 120A, 30

PSMN1R1-30PL,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP Semiconductors. NEXPERIA PSMN1R1-30PL - 120A, 30. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 6,020

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs243 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14850 pF @ 15 V
FET Feature-
Power Dissipation (Max)338W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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