PSMN018-100ESFQ - NXP Semiconductors - Transistors - FETs, MOSFETs - Single
REF: PSMN018-100ESFQ NXP Semiconductors
PSMN018-100ESFQ

NXP Semiconductors

NEXPERIA PSMN018 - NEXTPOWER 100

PSMN018-100ESFQ is a Transistors - FETs, MOSFETs - Single manufactured by NXP Semiconductors. NEXPERIA PSMN018 - NEXTPOWER 100. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 4,976

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C53A (Ta)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs21.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1482 pF @ 50 V
FET Feature-
Power Dissipation (Max)111W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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