BFU768F,115 - NXP Semiconductors - Transistors - Bipolar (BJT) - RF
REF: BFU768F,115 NXP Semiconductors
BFU768F,115

NXP Semiconductors

BFU768F - NPN WIDEBAND SILICON G

BFU768F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP Semiconductors. BFU768F - NPN WIDEBAND SILICON G. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 70mA.

In Stock: 5,000

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)2.8V
Frequency - Transition110GHz
Noise Figure (dB Typ @ f)1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz
Gain13.1dB
Power - Max220mW
DC Current Gain (hFE) (Min) @ Ic, Vce155 @ 10mA, 2V
Current - Collector (Ic) (Max)70mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device Package4-DFP

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