PSMN8R9-100BSEJ - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PSMN8R9-100BSEJ Nexperia USA Inc.
PSMN8R9-100BSEJ

Nexperia USA Inc.

MOSFET N-CH 100V 108A D2PAK

PSMN8R9-100BSEJ is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. MOSFET N-CH 100V 108A D2PAK. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 5,405

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C75A (Tj)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)296W
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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