Name: PSMN130-200D,118-NEX
Brand: Nexperia USA Inc.
SKU: PSMN130-200D,118-NEX
Availability: InStock

REF: PSMN130-200D,118-NEX Nexperia USA Inc.

PSMN130-200D,118-NEX

POWER FIELD-EFFECT TRANSISTOR, 2

PSMN130-200D,118-NEX is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. POWER FIELD-EFFECT TRANSISTOR, 2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Request a Quote

In Stock: 7,090

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2470 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63