Name: PMZB370UNE,315-NEX
Brand: Nexperia USA Inc.
SKU: PMZB370UNE,315-NEX
Availability: InStock

REF: PMZB370UNE,315-NEX Nexperia USA Inc.

PMZB370UNE,315-NEX

EFFECT TRANSISTOR, 0.9A I(D), 30

PMZB370UNE,315-NEX is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. EFFECT TRANSISTOR, 0.9A I(D), 30. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XFDFN.

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In Stock: 2,156

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.16 nC @ 15 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	78 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN