Name: PMXB360ENEAZ
Brand: Nexperia USA Inc.
SKU: PMXB360ENEAZ
Price: 0.41 USD
Availability: InStock

REF: PMXB360ENEAZ Nexperia USA Inc.

PMXB360ENEAZ

MOSFET N-CH 80V 1.1A DFN1010D-3

PMXB360ENEAZ is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. MOSFET N-CH 80V 1.1A DFN1010D-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XDFN Exposed Pad.

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In Stock: 8,712

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	400mW (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1010D-3
Package / Case	3-XDFN Exposed Pad