PMPB215ENEA/FX - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PMPB215ENEA/FX Nexperia USA Inc.
PMPB215ENEA/FX

Nexperia USA Inc.

MOSFET N-CH 80V 2.8A 6DFN

PMPB215ENEA/FX is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. MOSFET N-CH 80V 2.8A 6DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad.

In Stock: 9,914

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs230mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds215 pF @ 40 V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN2020MD-6
Package / Case6-UDFN Exposed Pad

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