PHD9NQ20T,118 - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PHD9NQ20T,118 Nexperia USA Inc.
PHD9NQ20T,118

Nexperia USA Inc.

MOSFET N-CH 200V 8.7A DPAK

PHD9NQ20T,118 is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. MOSFET N-CH 200V 8.7A DPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 8,585

Tiered Pricing USD
2,500+ $0.7583 —
5,000+ $0.7375 -3% BEST

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds959 pF @ 25 V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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