Name: GAN063-650WSAQ
Brand: Nexperia USA Inc.
SKU: GAN063-650WSAQ
Price: 15.04 USD
Availability: InStock

REF: GAN063-650WSAQ Nexperia USA Inc.

GAN063-650WSAQ

Nexperia USA Inc.

GANFET N-CH 650V 34.5A TO247-3

GAN063-650WSAQ is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. GANFET N-CH 650V 34.5A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

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In Stock: 2,646

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	143W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3