GAN041-650WSBQ - Nexperia USA Inc. - Transistors - FETs, MOSFETs - Single
REF: GAN041-650WSBQ Nexperia USA Inc.
GAN041-650WSBQ

Nexperia USA Inc.

GAN041-650WSB/SOT429/TO-247

GAN041-650WSBQ is a Transistors - FETs, MOSFETs - Single manufactured by Nexperia USA Inc.. GAN041-650WSB/SOT429/TO-247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 7,620

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C47.2A
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 400 V
FET Feature-
Power Dissipation (Max)187W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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