TCS1200 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: TCS1200 Microsemi Corporation
TCS1200

Microsemi Corporation

RF TRANS NPN 65V 1.03GHZ 55TU-1

TCS1200 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 65V 1.03GHZ 55TU-1. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case 55TU-1, current - collector (ic) (max) 60A.

In Stock: 1,043

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.03GHz
Noise Figure (dB Typ @ f)-
Gain10.2dBd
Power - Max2095W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A, 5V
Current - Collector (Ic) (Max)60A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55TU-1
Supplier Device Package55TU-1

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