S200-50 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: S200-50 Microsemi Corporation
S200-50

Microsemi Corporation

RF TRANS NPN 110V 30MHZ 55HX

S200-50 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 110V 30MHZ 55HX. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case 55HX, current - collector (ic) (max) 30A.

In Stock: 3,529

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)110V
Frequency - Transition1.5MHz ~ 30MHz
Noise Figure (dB Typ @ f)-
Gain12dB ~ 14.5dB
Power - Max320W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 1A, 5V
Current - Collector (Ic) (Max)30A
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / Case55HX
Supplier Device Package55HX

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