MS652S - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MS652S Microsemi Corporation
MS652S

Microsemi Corporation

RF TRANS NPN 16V 512MHZ M123

MS652S is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 16V 512MHZ M123. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case M123, current - collector (ic) (max) 2A.

In Stock: 3,266

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)16V
Frequency - Transition450MHz ~ 512MHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 200mA, 5V
Current - Collector (Ic) (Max)2A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / CaseM123
Supplier Device PackageM123

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