MS2322 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MS2322 Microsemi Corporation
MS2322

Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M115

MS2322 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 65V 1.15GHZ M115. Key specifications: mounting type Chassis Mount, package / case M115, current - collector (ic) (max) 1.5A, power - max 87.5W.

In Stock: 1,980

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 100mA, 5V
Current - Collector (Ic) (Max)1.5A
Operating Temperature-
Mounting TypeChassis Mount
Package / CaseM115
Supplier Device PackageM115

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