MS2212 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MS2212 Microsemi Corporation
MS2212

Microsemi Corporation

RF TRANS NPN 55V 1.215GHZ M222

MS2212 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 55V 1.215GHZ M222. Key specifications: mounting type Chassis Mount, operating temperature 250°C (TJ), package / case M222, current - collector (ic) (max) 1.8A.

In Stock: 9,792

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)55V
Frequency - Transition960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)-
Gain8.1dB ~ 8.9dB
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 500mA, 5V
Current - Collector (Ic) (Max)1.8A
Operating Temperature250°C (TJ)
Mounting TypeChassis Mount
Package / CaseM222
Supplier Device PackageM222

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