MS1227 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MS1227 Microsemi Corporation
MS1227

Microsemi Corporation

RF TRANS NPN 18V 30MHZ M113

MS1227 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 18V 30MHZ M113. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case M113, current - collector (ic) (max) 4.5A.

In Stock: 2,545

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)18V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Gain15dB
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A, 5V
Current - Collector (Ic) (Max)4.5A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / CaseM113
Supplier Device PackageM113

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