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MS1006

In Stock: 2,061
MS1006 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MS1006 Microsemi Corporation
MS1006

Microsemi Corporation

RF TRANS NPN 55V 30MHZ M135

MS1006 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 55V 30MHZ M135. Key specifications: mounting type Stud Mount, operating temperature 200°C, package / case M135, current - collector (ic) (max) 3.25A.

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In Stock: 2,061

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)55V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Gain14dB
Power - Max127W
DC Current Gain (hFE) (Min) @ Ic, Vce19 @ 1.4A, 6V
Current - Collector (Ic) (Max)3.25A
Operating Temperature200°C
Mounting TypeStud Mount
Package / CaseM135
Supplier Device PackageM135

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