MS1003 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MS1003 Microsemi Corporation
MS1003

Microsemi Corporation

RF TRANS NPN 18V 175MHZ M111

MS1003 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 18V 175MHZ M111. Key specifications: mounting type Surface Mount, operating temperature 200°C (TJ), package / case M111, current - collector (ic) (max) 20A.

In Stock: 4,894

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)18V
Frequency - Transition136MHz ~ 175MHz
Noise Figure (dB Typ @ f)-
Gain6dB
Power - Max270W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Current - Collector (Ic) (Max)20A
Operating Temperature200°C (TJ)
Mounting TypeSurface Mount
Package / CaseM111
Supplier Device PackageM111

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