MRF581 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MRF581 Microsemi Corporation
MRF581

Microsemi Corporation

RF TRANS NPN 18V 5GHZ MICRO X

MRF581 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 18V 5GHZ MICRO X. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case Micro-X ceramic (84C), current - collector (ic) (max) 200mA.

In Stock: 3,156

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)18V
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)3dB ~ 3.5dB @ 500MHz
Gain13dB ~ 15.5dB
Power - Max1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 50mA, 5V
Current - Collector (Ic) (Max)200mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseMicro-X ceramic (84C)
Supplier Device PackageMicro-X ceramic (84C)

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