MDS150 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MDS150 Microsemi Corporation
MDS150

Microsemi Corporation

RF TRANS NPN 60V 1.09GHZ 55AW

MDS150 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 60V 1.09GHZ 55AW. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case 55AW, current - collector (ic) (max) 4A.

In Stock: 7,686

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Frequency - Transition1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max350W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 500mA, 5V
Current - Collector (Ic) (Max)4A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55AW
Supplier Device Package55AW

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