MDS1100 - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: MDS1100 Microsemi Corporation
MDS1100

Microsemi Corporation

RF TRANS NPN 65V 1.03GHZ 55TU-1

MDS1100 is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 65V 1.03GHZ 55TU-1. Key specifications: mounting type Surface Mount, operating temperature 200°C (TJ), package / case 55TU-1, current - collector (ic) (max) 100A.

In Stock: 8,752

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.03GHz
Noise Figure (dB Typ @ f)-
Gain8.9dB
Power - Max8750W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Current - Collector (Ic) (Max)100A
Operating Temperature200°C (TJ)
Mounting TypeSurface Mount
Package / Case55TU-1
Supplier Device Package55TU-1

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