JAN2N6800 - Microsemi Corporation - Transistors - FETs, MOSFETs - Single
REF: JAN2N6800 Microsemi Corporation
JAN2N6800

Microsemi Corporation

MOSFET N-CH 400V 3A TO39

JAN2N6800 is a Transistors - FETs, MOSFETs - Single manufactured by Microsemi Corporation. MOSFET N-CH 400V 3A TO39. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-205AF Metal Can.

In Stock: 4,492

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34.75 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AF Metal Can

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