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APTM120U10DAG

In Stock: 5,456
APTM120U10DAG - Microsemi Corporation - Transistors - FETs, MOSFETs - Single
REF: APTM120U10DAG Microsemi Corporation
APTM120U10DAG

Microsemi Corporation

MOSFET N-CH 1200V 160A SP6

APTM120U10DAG is a Transistors - FETs, MOSFETs - Single manufactured by Microsemi Corporation. MOSFET N-CH 1200V 160A SP6. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP6.

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In Stock: 5,456

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 58A, 10V
Vgs(th) (Max) @ Id5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs1100 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds28900 pF @ 25 V
FET Feature-
Power Dissipation (Max)3290W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

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