APT11N80KC3G - Microsemi Corporation - Transistors - FETs, MOSFETs - Single
REF: APT11N80KC3G Microsemi Corporation
APT11N80KC3G

Microsemi Corporation

MOSFET N-CH 800V 11A TO220

APT11N80KC3G is a Transistors - FETs, MOSFETs - Single manufactured by Microsemi Corporation. MOSFET N-CH 800V 11A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 2,143

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1585 pF @ 25 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 [K]
Package / CaseTO-220-3

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