2N6849 - Microsemi Corporation - Transistors - FETs, MOSFETs - Single
REF: 2N6849 Microsemi Corporation
2N6849

Microsemi Corporation

MOSFET P-CH 100V 6.5A TO39

2N6849 is a Transistors - FETs, MOSFETs - Single manufactured by Microsemi Corporation. MOSFET P-CH 100V 6.5A TO39. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-205AF Metal Can.

In Stock: 8,965

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AF Metal Can

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