0910-60M - Microsemi Corporation - Transistors - Bipolar (BJT) - RF
REF: 0910-60M Microsemi Corporation
0910-60M

Microsemi Corporation

RF TRANS NPN 65V 1GHZ 55AW

0910-60M is a Transistors - Bipolar (BJT) - RF manufactured by Microsemi Corporation. RF TRANS NPN 65V 1GHZ 55AW. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case 55AW, current - collector (ic) (max) 8A.

In Stock: 9,259

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition890MHz ~ 1GHz
Noise Figure (dB Typ @ f)-
Gain8dB ~ 8.5dB
Power - Max180W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)8A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55AW
Supplier Device Package55AW

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