2N2369 - Microchip Technology - Transistors - Bipolar (BJT) - RF
REF: 2N2369 Microchip Technology
2N2369

Microchip Technology

SMALL-SIGNAL BJT

2N2369 is a Transistors - Bipolar (BJT) - RF manufactured by Microchip Technology. SMALL-SIGNAL BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), current - collector (ic) (max) 200mA, power - max 680mW.

In Stock: 6,970

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max680mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Current - Collector (Ic) (Max)200mA
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device Package-

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