2N1725 - Microchip Technology - Transistors - Bipolar (BJT) - RF
REF: 2N1725 Microchip Technology
2N1725

Microchip Technology

POWER BJT

2N1725 is a Transistors - Bipolar (BJT) - RF manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Stud Mount, operating temperature 175°C (TJ), current - collector (ic) (max) 5A, power - max 3W.

In Stock: 3,414

Specifications

13 parameters
Product StatusActive
Transistor Type3 NPN
Voltage - Collector Emitter Breakdown (Max)80V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max3W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 2A, 15V
Current - Collector (Ic) (Max)5A
Operating Temperature175°C (TJ)
Mounting TypeStud Mount
Package / Case-
Supplier Device Package-

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