3N163 DIE - Linear Integrated Systems, Inc. - Transistors - FETs, MOSFETs - Single
REF: 3N163 DIE Linear Integrated Systems, Inc.
3N163 DIE

Linear Integrated Systems, Inc.

P-CHANNEL, SINGLE ENHANCEMENT MO

3N163 DIE is a Transistors - FETs, MOSFETs - Single manufactured by Linear Integrated Systems, Inc.. P-CHANNEL, SINGLE ENHANCEMENT MO. Key specifications: mounting type Surface Mount, package / case Die.

In Stock: 10,000

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C50mA
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-6.5V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 15 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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