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IXXP12N65B4D1

In Stock: 1,893
IXXP12N65B4D1 - IXYS - Transistors - IGBTs - Single
REF: IXXP12N65B4D1 IXYS
IXXP12N65B4D1

IXYS

IGBT

IXXP12N65B4D1 is a Transistors - IGBTs - Single manufactured by IXYS. IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3, current - collector (ic) (max) 38 A.

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In Stock: 1,893

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)38 A
Current - Collector Pulsed (Icm)70 A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 12A
Power - Max160 W
Switching Energy440µJ (on), 220µJ (off)
Input TypeStandard
Gate Charge34 nC
Td (on/off) @ 25°C13ns/158ns
Test Condition400V, 12A, 20Ohm, 15V
Reverse Recovery Time (trr)43 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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